Spin Transport In Semiconductor Lab Report

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Project Report Spin Transport in Semiconductors EE-453 U1 Group Members: Fatemah AlSejari- 17429 Fatema AlMuteiry-15020 Spin Transport in Semiconductors Introduction Semiconductors are special materials that have diffusive and drift current, that there is a significant interaction between a diffusive spin current and a drift charge current. In semiconductors such as silicon the electrochemical potential (μ_Spin) of the spin is not constant through the material. The spin accumulation considered as a function of magnitude at each point. Because of that, there are many features of the spin transport in semiconductor such as spin conversion between drift and diffusion currents, and a gain/damping of the spin current by a charge current. Due…show more content…
Giant magnetoresistance, which is best to be called as GMR, where GMR refers to the resistance of two terminal devices consisting of alternating layers of non-magnetic and ferromagnetic films. The effect is manifested as a significant electrical resistance change depending on the relative magnetization direction of the adjacent ferromagnetic layers. The resistance is high when the ferromagnetic layers are in antiparallel configuration (magnetization direction opposite) and low for parallel configuration (magnetization direction…show more content…
In figure 15 it shows how big different on the spin transport when changing the values. First case when the value at the maximum the wave is limited, where it is higher peaked at zero (x-axis) and 0.05 (y-axis) and it is zero on the sides, which means there is no spin. Second case, when the value is in between (mx/min) the wave is more likely to be wider, that the peaks are getting farther than the when it was at it maximum value, and also it is not zero on the sides that the spin is still there. And third case, when the value was at it minimum value the wave is not clear, where we can only see the highest peak of that wave. What we noticed that all three cases the highest peak is also at
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