Stark Tuning Essay

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PRL 97, 176404 (2006) PHYSICAL REVIEW LETTERS week ending 27 OCTOBER 2006 Stark Tuning of Donor Electron Spins in Silicon F. R. Bradbury,1,* A. M. Tyryshkin,1 Guillaume Sabouret,1 Jeff Bokor,2,3 Thomas Schenkel,2 and S. A. Lyon1 Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA 2 E. O. Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 3 Department of Electrical Engineering and Computer Science, University of California, Berkeley, California 94720, USA (Received 23 March 2006; published 25 October 2006) We report Stark shift measurements for 121 Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28 Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer. DOI: 10.1103/PhysRevLett.97.176404 PACS numbers: 71.70.Ej, 03.67.Lx, 71.55.Cn, 76.30.ÿv 1 Since Kane’s original proposal in 1998 [1], the promise of implementing quantum computation (QC) with spin qubits in silicon has generated much excitement. Recent scaling strategies [2] take advantage of long coherence times of electron [3,4] and nuclear [5] spins and mature silicon technologies. In donor spin QC architectures impurities are arranged in large ordered arrays on the silicon chip, placed in a strong magnetic field, and manipulated by resonant microwave pulses. To operate on single spins in a tightly packed qubit array, it has been suggested that the magnetic resonance be electrostatically tuned (Stark tuning)

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