Metal Oxide Semiconductor

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Metal oxide semiconductor Complementary metal oxide semiconductor (CMOS) circuits were invented in 1963 by Frank Wanlass at Fairchild Semiconductor. The first successful commercial use of the CMOS was established by RCA in 1968. Originally a low-power but slow alternative to transistor-transistor logic (TTL), early CMOS were found in the watch industry and in other fields where battery life was more important than speed. Initially, the biggest drawback to using a CMOS logic unit was the speed at which the logic functions could be performed. The transistor-transistor logic (TTL) controller, while similar, was able to perform functions in a faster rate of speed, even while consuming more power. With the inherent design feature of lower power consumption, engineers were soon able to increase the speed of the performance of the CMOS to a level that was much faster than traditional TTL controllers. Complementary metal oxide semiconductor (CMOS) is a widely used type of semiconductor. CMOS use both NMOS (negative polarity) and PMOS (positive polarity) circuits. Since only one of the circuit types is on at any given time, CMOS chips require less power than chips using just one type of transistor. This makes them particularly attractive for use in battery powered devices, microprocessors, microcontrollers, static RAM, and other digital logic circuit. CMOS is also used for several analog circuits such as image sensors, data converters, and highly integrated transceivers for many types of communication. CMOS is sometimes referred to as complementary-symmetry metal–oxide–semiconductor. This is a reference to the fact that the typical digital design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions. The use of p-type and n-type metal–oxide–semiconductor field-effect

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