Hit Solar Cell

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INCREASING TUNNELING CURRENT IN A HIT STRUCTURE THROUGH THICKNESS AND DOPING DENSITY VARIATION: A SIMULATION BASED STUDY By Amreen Akhtar Shuaib Rahman Submitted to the Department of Electrical and Electronic Engineering Faculty of Sciences and Engineering East West University in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering (B.Sc. in EEE) [Semester, year] Approved By ________________ ________________ Thesis Advisor Chairperson [Advisor name] [chairperson’s name] Abstract Heterojunction solar cells have proved to exceed the efficiency barrier that homojunction solar cells have tried to cross for decades. Among the most efficient heterojunction solar cell structures is the HIT structure, or Heterojunction with Intrinsic Thin Layer structure is the most popular. The simplest form of HIT structure is: Amorphous P-type semiconductor/Intrinsic Semiconductor/Crystalline N-type semiconductor, or vice versa. In a heterojunction, due to the difference in bandgap of the materials, a potential barrier forms that creates obstacle for the electrons/holes to travel from one side to the other. Such trapping of holes reduces the efficiency of the solar cell. However, a fraction these electrons/holes pass the potential barrier through Quantum Tunneling and create a tunneling current, which contributes to the overall current; hence improving the efficiency. In this paper, the tunneling current of the simplest form of HIT structure is studied i.e. P-type a-Si/i-Si/N-type c-Si. The lengths of the P-side, intrinsic layer and the N-side is varied to study how the thickness of the layers impact the tunneling current. Also, the impact of doping densities of the P-side and N-side on the

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