Diode Chracteristic Essay

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Experiment 1: Diode characteristics Objective: * To study the characteristic of silicon and germanium diodes Apparatus / Equipment: Instruments: DC power supply Function Generator Digital Multimeter (DMM) Components: Diodes: Silicon (D1N4002), Germanium (D1N4148) Resistors: 1kΩ, 1MΩ Brief Theory: Diodes is one of the pn junction device which allowed the flow in one direction.there are two state for diodes that is forward bias and reversed bias.In forward bias positive voltage VD is applied to the p-region of the diodes.the potential barrier decreases.the direction of the applied electric field EA is the opposite as that of the E-field in the space-charge region. The net result is that the electric field in the space-charge region lower than the thermal equilibrium value. Majority carrier electrons from the n-region diffuse into p-region.this will allow the current flow .In reverse bias state,positive voltage is applied to the n-region of the pn junction. Applied voltage VR induces an applied electric field EA. Direction of the applied field is the same as that of the E-field in the space-charge region. Magnitude of the electric field in the space-charge region increases above the thermal equilibrium value. Increased electric field holds back the holes in the p-region and the electrons in the n-region. No current across the pn junction Procedure: Part A : Forward-bias Diode Characteristics. 1. The circuit of figure below is constructed with the supply (E) is set at 0 V. The measured value of the resistor is then recorded. 2. The supply voltage is increased until VD reads 0.1 V. Then current ID is measured and the results in Table 1.1 are recorded. 3. Step 2 is repeated for the remaining settings of VD as shown in the Table 1.1. 4. The silicon diode is replaced by a germanium diode and Table 1.2 is completed. 5. A graph
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